A new aluminum-free material system for intersubband emitters and detectors
نویسندگان
چکیده
We report on the InGaAs/GaAsSb material system lattice-matched to InP for intersubband devices. Due to the much lower electron effective mass in the GaAsSb barrier material, this system is very promising for the realization of high performance intersubband devices, like quantum-cascade lasers and quantum well infrared photodetectors. Type I intersubband absorption in InGaAs/GaAsSb multi-quantum wells samples has been studied experimentally and the conduction band offset at the InGaAs/GaAsSb hetero-interface has been determined to be 360 meV. Additionally, we realized the first Al-free QCL based on the same material system, emitting at a wavelength of 11.3 μm.
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